Resumen de Through silicon vias: from a physical point of view to a compact models initiation

Fengyuan Sun, Jean Etienne, Francis Calmon, Christian Gontrand

• Purpose – The substrate coupling and loss in integrated circuits are analyzed. Then, the authors extract impedances between any numbers of embedded contacts. The paper aims to discuss these issues.

  Design/methodology/approach – The paper proposes a new substrate network 3D extraction technique, adapted from a transmission line method or Green kernels, but in the whole volume.

  Findings – Extracting impedances between any numbers of embedded contacts with variable shapes or/and through silicon via. This 3D method is much faster comparing with FEM Originality/value – Previous works consider TSVs alone, contacts onto the substrate. The authors do study entanglement between the substrate and the interconnections.