Through silicon vias: from a physical point of view to a compact models initiation

• Fengyuan Sun ^[1] ; Jean-Etienne Lorival ^[1] ; Francis Calmon ^[1] ; Christian Gontrand ^[1]
  1. [1] University of Lyon System

     University of Lyon System

     Arrondissement de Lyon, Francia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 33, Nº 4 (Special Issue: SCEE 2012), 2014, págs. 1462-1484
• Idioma: inglés
• Enlaces
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• Resumen

  • Purpose – The substrate coupling and loss in integrated circuits are analyzed. Then, the authors extract impedances between any numbers of embedded contacts. The paper aims to discuss these issues.

    Design/methodology/approach – The paper proposes a new substrate network 3D extraction technique, adapted from a transmission line method or Green kernels, but in the whole volume.

    Findings – Extracting impedances between any numbers of embedded contacts with variable shapes or/and through silicon via. This 3D method is much faster comparing with FEM Originality/value – Previous works consider TSVs alone, contacts onto the substrate. The authors do study entanglement between the substrate and the interconnections.