Resumen de Heat generation in silicon nanometric semiconductor devices

Orazio Muscato, Wolfgang Wagner, Vincenza Di Stefano

• Purpose – The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.

  Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.

  Findings – A new estimator of the heat generation rate to be used in MC simulations has been found.

  Originality/value – The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.