Heat generation in silicon nanometric semiconductor devices

• Orazio Muscato ^[2] ; Wolfgang Wagner ^[1] ; Vincenza Di Stefano ^[2]
  1. [1] Weierstrass Institute for Applied Analysis and Stochastics

     Weierstrass Institute for Applied Analysis and Stochastics

     Berlin, Stadt, Alemania

     
  2. [2] Universitá di Catania
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 33, Nº 4 (Special Issue: SCEE 2012), 2014, págs. 1198-1207
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • Purpose – The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.

    Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.

    Findings – A new estimator of the heat generation rate to be used in MC simulations has been found.

    Originality/value – The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.