Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals

• Autores: S. Chatbouri, M. Troudi, Adel Kalboussi, Abdelkader Souifi
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 78, 2017, págs. 227-232
• Idioma: inglés
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• Resumen

  • Abstract The transport phenomena in Metal-Oxide-Semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer has been investigated by high frequency Capacitance-Voltage (C-V) method and the Deep-Level Transient Spectroscopy (DLTS). For the reference samples without Si-NCs, we observe a slow electron trap for a large temperature range, which is probably a response of a series electron traps having a very close energy levels. A clear series of electron traps are evidenced in DLTS spectrum for MOS samples with Si-NCs. Their activation energies are comprised between 0.28 eV and 0.45 eV. Moreover, we observe in this DLTS spectrum, a single peak that appears at low temperature which we attributed to Si-NCs response. In MOS structure without Si-NCs, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap-states. However, at low temperature, the tunneling of charge carriers from highly Poly-Si to Si-substrate trough the trapping/detrapping mechanism in the Si-NCs contributed to the conduction mechanism for MOS with Si-NCs. These results are helpful to understand the principle of charge transport of MOS structures having a Si-NCs in the SiOx = 1.5 oxide matrix.