Model of phonon contribution to nonionizing energy loss (NIEL) for InP/InGaAs heterojunction

• Autores: Xiao-Hong Zhao, Hong-Liang Lu, Yu-Ming Zhang, Yi-Men Zhang
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 78, 2017, págs. 156-160
• Idioma: inglés
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• Resumen

  • Abstract A new model of nonionizing energy loss (NIEL) considering the contribution of phonons, is studied by Monte Carlo code SRIM, in which phonon is the characterization of the crystal lattice vibration in physics. Compared with other reference data of NIEL, the validity of SRIM-NIEL based on presented model has been verified and the significance of phonon to NIEL has been discussed in the paper. Also, the effects of different kinds of incident ions and different proton energies on NIEL have been calculated and discussed for InGaAs.