Resumen de Output characteristics analysis for n‐buried‐PSOI sandwiched RF power LDMOS

Zehong Li, Yong Liu, Lijuan Wu, Li Yi, Zhang Bo, Zhaoji Li

• Purpose – The purpose of this paper is to present a novel n‐buried‐PSOI sandwiched radio frequencies (RF) power lateral diffused metal‐oxide semiconductor (LDMOS) and analyze its output characteristics.

  Design/methodology/approach – The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using the computer‐aided design tools.

  Findings – This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage are higher than that of the conventional LDMOS.

  Originality/value – This paper puts forward a novel n‐buried‐PSOI sandwiched structure of RF power LDMOS. The analysis indicates that the output characteristics of this device are a great improvement on the conventional LDMOS and the n‐buried‐PSOI, RF power LDMOS proposed by earlier authors.