Output characteristics analysis for n‐buried‐PSOI sandwiched RF power LDMOS

• Zehong Li ^[1] ; Yong Liu ^[2] ; Lijuan Wu ^[1] ; Li Yi ^[1] ; Bo Zhang ^[1] ; Zhaoji Li ^[1]
  1. [1] State Key Laboratory of Electronic Thin Films and Integrated Devices of UESTC
  2. [2] Sichuan Institute of Solid-State Circuits, Chongqing, China, and
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 29, Nº 2 (Special Issue: Selected papers from CAC 2008), 2010, págs. 528-535
• Idioma: inglés
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• Resumen

  • Purpose – The purpose of this paper is to present a novel n‐buried‐PSOI sandwiched radio frequencies (RF) power lateral diffused metal‐oxide semiconductor (LDMOS) and analyze its output characteristics.

    Design/methodology/approach – The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using the computer‐aided design tools.

    Findings – This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage are higher than that of the conventional LDMOS.

    Originality/value – This paper puts forward a novel n‐buried‐PSOI sandwiched structure of RF power LDMOS. The analysis indicates that the output characteristics of this device are a great improvement on the conventional LDMOS and the n‐buried‐PSOI, RF power LDMOS proposed by earlier authors.