Resumen de PB‐SON RFLDMOS characteristics analysis

Liyuan Wu, Zehong Li, Zhang Bo, Zhaoji Li

• Purpose – The purpose of this paper is to present a novel n‐buried partial silicon‐on‐nothing (SON) structure of radio frequencies (RF) power lateral double‐diffused metal‐oxide‐semiconductor (LDMOS) and analyze its RF characteristics.

  Design/methodology/approach – The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using 2D simulator MEDICI.

  Findings – This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage is higher than that of the conventional LDMOS.

  Originality/value – This paper usefully shows how SON having low‐dielectric constant can reduce the horizontal drain field and the drain‐substrate capacitance, and increase the breakdown voltage as a result.