PB‐SON RFLDMOS characteristics analysis

• Lijuan Wu ^[1] ; Zehong Li ^[1] ; Bo Zhang ^[1] ; Zhaoji Li ^[1]
  1. [1] University of Electronic Science and Technology of China

     University of Electronic Science and Technology of China

     China

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 29, Nº 2 (Special Issue: Selected papers from CAC 2008), 2010, págs. 522-527
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • Purpose – The purpose of this paper is to present a novel n‐buried partial silicon‐on‐nothing (SON) structure of radio frequencies (RF) power lateral double‐diffused metal‐oxide‐semiconductor (LDMOS) and analyze its RF characteristics.

    Design/methodology/approach – The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using 2D simulator MEDICI.

    Findings – This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage is higher than that of the conventional LDMOS.

    Originality/value – This paper usefully shows how SON having low‐dielectric constant can reduce the horizontal drain field and the drain‐substrate capacitance, and increase the breakdown voltage as a result.