ESD protection for negative charge pump (CP) using CP internal switches

• Autores: Ankit Srivastava, Gene Worley, Xiaohong Quan, Guoqing Miao
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 57, 2016, págs. 59-63
• Idioma: inglés
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• Resumen

  • AbstracThe standard ESD protection schemes are not very reliable for negative charge pump used in Class G power amplifiers. This work presents a novel ESD protection scheme using internal charge pump switches as ESD clamps. Transmission line pulsing (TLP) measurements show that an elevated level of ESD protection can be achieved with this scheme.