Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

• Autores: H. Lu, J.P. Xu, L. Liu, L.S. Wang, P.T. Lai, W.M. Tang
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 56, 2016, págs. 17-21
• Idioma: inglés
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• Resumen

  • AbstracThe interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2 −/NH3-plasma are investigated, showing that lower interface-state density (1.24 × 1012 cm− 2 eV− 1 near midgap), smaller gate leakage current density (1.34 × 10− 5 A/cm2 at Vfb + 1 V), smaller capacitance equivalent thickness (1.43 nm), and larger equivalent dielectric constant (24.5) can be achieved for the sample with NH3-plasma treatment than the samples with N2 −/no-plasma treatment. The mechanisms lie in the fact that NH3-plasma can provide not only N atoms, but H atoms and NH radicals to effectively passivate the high-k/GaAs interface, thus less pinning the Femi level at high-k/GaAs interface.