Journal of dairy science

• 

  Año 2000, Vol. 83, Número 7

  • AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity

    C. Becker, C. Sirtori

    págs. 463-465

    

  • Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

    O. B. Shchekin

    págs. 466-468

    

  • High-repetition-rate, all-solid-state, Ti:sapphire-pumped optical parametric oscillator for the mid-infrared

    P. J. Phillips

    págs. 469-471

    

  • Terahertz demultiplexing by a single-shot time-to-space conversion using a film of squarylium dye J aggregates

    M. Furuki

    págs. 472-474

    

  • Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnO

    H. Ohta, K.-i. Kawamura

    págs. 475-477

    

  • Visible emission from electroluminescent devices using an amorphous AIN:Er^3^+ thin-film phosphor

    H. H. Richardson, V. I. Dimitrova, P. G. Van Patten

    págs. 478-479

    

  • Diffraction of guided optical waves by surface acoustic waves in GaN

    R. Rimeika, D. Ciplys

    págs. 480-482

    

  • Upconversion luminescence of Er^3^+ in alkali bismuth gallate glasses

    E. Y. B. Pun, S. Q. Man

    págs. 483-485

    

  • Electro-optic field mapping system utilizing external gallium arsenide probes

    K. Yang, L. P. B. Katehi

    págs. 486-488

    

  • Functional separation of biasing and sustaining voltages in two-frequency capacitively coupled plasma

    T. Kitajima

    págs. 489-491

    

  • Antenna configuration for uniform large-area inductively coupled plasma production

    C. S. Chang, H. Y. Chang, S. S. Kim

    págs. 492-494

    

  • Measurement of negative-ion density in high-density C~4F~8 plasma using a laser photodetachment technique combined with a millimeter-wave open resonator

    K. Kato, A. Kono

    págs. 495-497

    

  • Influence of sample oxidation on the nature of optical luminescence from porous silicon

    J. W. Freeland, W. J. Antel, I. Coulthard

    págs. 498-500

    

  • Friction contrast in resonant cantilever vibration mode

    A. Spychalski-Merle

    págs. 501-503

    

  • Size-dependent picosecond energy relaxation in PbSe quantum dots

    T. Okuno, Y. Masumoto

    págs. 504-512

    

  • Effect of multidirection rubbing on the alignment of nematic liquid crystal

    Z. Zhuang, Y. J. Kim, J. S. Patel

    págs. 513-515

    

  • Morphological instability of growth fronts due to stress-induced mobility variations

    W. Barvosa-Carter, J. F. Sage

    págs. 516-518

    

  • Raman study of Zn~xBe~1~-~xSe alloy (100) epitaxial layers

    O. Pages, J. P. Laurenti, M. Ajjoun

    págs. 519-521

    

  • Optical microcavities based on amorphous silicon-nitride Fabry-Perot structures

    F. Giorgis

    págs. 522-524

    

  • Crystallization of bulk amorphous Zr-Ti(Nb)-Cu-Ni-Al

    J. F. Loffler

    págs. 525-527

    

  • Precipitation of icosahedral quasicrystalline phase in Hf~6~5Al~7~.~5Ni~1~0Cu~1~2~.~5Pd~5 metallic glass

    C. Li, J. Saida, M. Matsushita

    págs. 528-530

    

  • A formation mechanism of carbon nanotube films on SiC(0001)

    M. Kusunoki

    págs. 531-533

    

  • Stacking fault energies in Si doped GaN: A first principles study

    P. D. Bristowe, J. A. Chisholm

    págs. 534-536

    

  • Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy

    Y. F. Chen, H. J. Ko

    págs. 537-539

    

  • Real-time measurements of the pseudodielectric function of low-temperature-grown GaAs

    D. A. Gajewski

    págs. 540-542

    

  • Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

    T. Fujisawa, Y. Hirayama

    págs. 543-545

    

  • Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

    A. Krtschil

    págs. 546-548

    

  • Spectroscopic measurements on the Andreev reflection probability as a function of temperature

    J. Appenzeller

    págs. 549-551

    

  • Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing

    V. Privitera, G. Fortunato, C. Spinella

    págs. 552-554

    

  • Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides

    T.-K. Kang, M.-J. Chen

    págs. 555-557