págs. 1-1
págs. 1-9
Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models
YanLing Wang, Xiaojin Li, Jian Qing, Yan Zeng, Yanling Shi, Ao Guo, ShaoJian Hu, Shoumian Chen, Yuhang Zhao
págs. 10-15
págs. 16-21
págs. 22-31
Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse
Yang Liu, ChangChun Chai, QingYang Fan, ChunLei Shi, Xiaowen Xi, XinHai Yu, YingTang Yang
págs. 32-37
págs. 38-45
Characteristics of ESD protection devices operated under elevated temperatures
Wei Liang, Aihua Dong, Hang Li, Meng Miao, Chung-Chen Kuo, Maxim Klebanov, J.J. Liou
págs. 46-51
págs. 52-57
The effect of electro-thermal parameters on IGBT junction temperature with the aging of module
Lingling Li, Yahui Xu, Zhigang Li, Pengchong Wang, Bing Wang
págs. 58-63
págs. 64-77
Evaluation and modeling of adhesion layer in shock-protection structure for MEMS accelerometer
Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Hiroshi Toshiyoshi, Masato Sone, Kazuya Masu, Katsuyuki Machida
págs. 78-84
págs. 85-91
págs. 92-97
págs. 98-105
págs. 106-112
págs. 113-121
págs. 122-133
págs. 134-142
Effect of thermocapillary action in the underfill encapsulation of multi-stack ball grid array
Fei Chong Ng, Aizat Abas, M.H.H. Ishak, M.Z. Abdullah, Abdul Aziz
págs. 143-160
Measurement of underfill interfacial and bulk fracture toughness in flip-chip packages
Shrikant Swaminathan, Kamal K. Sikka, Richard F. Indyk, Tuhin Sinha
págs. 161-172
Towards an efficient SEU effects emulation on SRAM-based FPGAs
Anis Souari, Claude Thibeault, Yves Blaquière, Raoul Velazco
págs. 173-182
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