IEICE transactions on electronics

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  Año 1999, Vol. 82, Número 5

  • Nonlinear Compensation Technologies for Microwave Power Amplifiers in Radio Communication Systems

    T. Nojima

    págs. 679-686

    

  • A Novel Distortion Compensation Technique Using an Active Inductor

    H. Hayashi, M. Muraguchi

    págs. 687-691

    

  • Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process

    M. Uesugi, K. Hasegawa, K. Hiroshige, Y. Iyama, T. Takagi, O. Ishida, N. Suematsu, M. Ono, S. Kubo

    págs. 692-698

    

  • Distortion Characteristics of an Even Harmonic Type Direct Conversion Receiver for CDMA Satellite Communications

    K. Itoh, Y. Isota, O. Ishida, H. Ikematsu, K. Tajima, Koji Kawakami

    págs. 699-707

    

  • System-Level Compensation Approach to Overcome Signal Saturation, DC Offset, and 2nd-Order Nonlinear Distortion in Linear Direct Conversion Receiver

    T. Yamaji, H. Tanimoto, Y. Suzuki, H. Tsurumi, M. Soeya, H. Yoshida

    págs. 708-716

    

  • A 1.9 GHz Single-Chip RF Front-End GaAs MMIC with Low-Distortion Cascode FET Mixer

    Y. Yoshii, S. Sugiyama, N. Suematsu, T. Takagi, M. Nakayama, K. Horiguchi, K. Yamamoto

    págs. 717-724

    

  • Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1.95 GHz Wide-Band CDMA Cellular Phones

    T. Miyashita, S. Ohara, K. Joshin, Y. Nakasha, T. Iwai

    págs. 725-729

    

  • Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance

    K. Ishikura, J. Morikawa, H. Tsutsui, M. Kuzuhara, I. Takenaka, H. Takahashi, K. I. Asano

    págs. 730-736

    

  • A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model

    M. Nakayama, Y. Ikeda, T. Takagi, K. Horiguchi, K. Yamauchi, K. Mori

    págs. 737-743

    

  • Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain

    K. Matsunaga, Y. Okamoto, M. Kanamori

    págs. 744-749

    

  • A 1-V, 1-V~p~p Input Range, Four-Quadrant Analog Multiplier Using Neuron-MOS Transistors

    K. Tanno, O. Ishizuka, Z. Tang

    págs. 750-757

    

  • Photorefractive Combining and Shaping Properties of Amplitude-Modulated Optical Signals by Two-Wave Mixing in Cu-KNSBN Crystal

    H. K. Park, S. S. Choi, J. U. Um, K. Y. Lee, N. Kim

    págs. 758-765

    

  • Magnetic Shielding Analysis of Axisymmetric HTS Plates in Mixed State

    A. Kamitani, S. Ohshima

    págs. 766-773

    

  • H-Plane Manifold-Type Broadband Triplexer with Closely Arranged Junctions

    H. Asao, S. Betsudan, Y. Iwasa, T. Nishino, M. Miyazaki, T. Horie

    págs. 774-780

    

  • A High Voltage Generator Using Charge Pump Circuit for Low Voltage Flash Memories

    K. W. Min, S. H. Kim

    págs. 781-783