Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

• Autores: José Ignacio Arana Tabernero
• Directores de la Tesis: Luis Francisco López Bonilla (dir. tes.)
• Lectura: En la Universidad Carlos III de Madrid ( España ) en 2011
• Idioma: inglés
• Tribunal Calificador de la Tesis: Ana María Carpio Rodríguez (presid.), Juan Diego Álvarez Román (secret.), Manuel Kindelán Segura (voc.), Ramón Escobedo Martínez (voc.), Gloria Platero Coello (voc.), David Sánchez Martín (voc.), Holger T. Grahn (voc.)
• Materias:
  • Física
    • Electromagnetismo
      • Ondas electromagnéticas
    • Química física
      • Teoría cuántica
    • Física del estado sólido
      • Semiconductores
  • Ciencias tecnológicas
    • Tecnología electrónica
      • Dispositivos semiconductores
• Enlaces
  • Tesis en acceso abierto en: e-Archivo
• Resumen

  • The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.