Rare Earth-Doped Silicon-Based Light Emitting Devices: Towards new Integrated Photonic Building Blocks

• Autores: Joan Manel Ramírez Ramírez
• Directores de la Tesis: Blas Garrido Fernández (dir. tes.)
• Lectura: En la Universitat de Barcelona ( España ) en 2015
• Idioma: catalán
• Tribunal Calificador de la Tesis: Anthony Kenyon (presid.), Pablo Sanchis Kilders (secret.), Mauricio Moreno Sereno (voc.)
• Materias:
  • Física
    • Electrónica
      • Transporte de electrones
    • Óptica
      • Espectroscopia de emisión
    • Física del estado sólido
      • Luminiscencia
      • Propiedades ópticas
• Enlaces
  • Tesis en acceso abierto en: Dipòsit Digital de la UB
• Resumen

  • This thesis presents the work carried out towards the implementation of RE-doped Si-based light emitting devices as integrated optoelectronic building blocks for Silicon Photonics. This work spans from the fundamentals such as the structure, the morphology of active layers containing Si-ncs and/or RE ions or the origin of the EL emission under different voltage excitations, to the development of advanced Si-based light emitting devices, providing insights on the device design, mask layout, device fabrication and the optoelectronic characterization. Also, novel layer architectures are proposed to overcome some of the inherent limitations of studied devices, paving the way towards efficient and reliable Si-based light emitting devices. This thesis is divided in two main blocks: one dedicated to the study of Er-doped Si-based light emitting devices emitting at 1.54 µm for on-chip optical data routing, and another one focussed on the structural and luminescence properties of Tb3+ and Ce3+ doped silicon oxide and oxynitride thin films with different layer compositions as enabling materials for sensing and RGB micro display applications. Also, different multilayer architectures containing alternated RE-doped single layers are explored.