Resumen de Contribución metodológica práctica al diseño, simulación y medida de amplificadores de potencia monolíticos de microondas en tecnología de nitruro de galio
- español
Las comunicaciones actuales demandan sistemas con dispositivos activos de prestaciones punteras por encima de las tecnologías monolíticas establecidas, a un coste razonable y complejidad circuital limitada. Esta tesis se centra en el diseño, simulación electromagnética y medida de amplificadores integrados monolíticos de alta potencia y alta frecuencia en tecnología de nitruro de galio. Se han diseñado dos amplificadores monolíticos, cuyos desarrollos se han utilizado como base para razonar la correcta configuración que ha de aplicarse en la simulación electromagnética de su layout. También se presenta un procedimiento estructurado para la construcción y simulación de layouts de circuitos integrados complejos con una alta confiabilidad en los resultados. Finalmente, se han realizado montajes de medida para los circuitos monolíticos fabricados, abordando adecuadamente la gestión térmica de los amplificadores de potencia de alta frecuencia en nitruro de galio. En los resultados se alcanzan 18dB de ganancia entre 1 y 39GHz con una planitud de 3dB, una adaptación en entrada y salida adecuada a 50ohm para todo el rango de funcionamiento y una potencia de salida en saturación superior a 32dBm desde 1 hasta 37GHz. La bibliografía consultada ha consistido en artículos técnicos revisados por pares, así como bibliografía técnica especializada en amplificadores monolíticos de microondas.
Today's communications needs demand systems made of active devices with leading-edge performance over established monolithic technologies, at a reasonable cost and limited circuit complexity. This thesis focuses on the design, electromagnetic simulation and measurement of high-power, high-frequency monolithic integrated amplifiers in gallium nitride technology. Two monolithic amplifiers have been designed, who have been used as a basis for reasoning the correct configuration to be applied in the electromagnetic simulation of their layout. A structured procedure for the construction and simulation of complex integrated circuit layouts with high reliability in the results is also presented. Finally, test fixtures for both fabricated monolithic circuits are presented, which correctly address the thermal management of the high-frequency gallium nitride power amplifiers. Output results show a gain of 18dB with a 3dB ripple from 1 to 39GHz, an adequate input and output impedance match to 50 ohm and an saturated output power level higher than 32dBm from 1 to 37GHz. Consulted bibliography consisted on peer reviewed technical papers, as well as specialiced publications on the field of the microwave monolithic amplifiers.
- English
Today's communications needs demand systems made of active devices with leading-edge performance over established monolithic technologies, at a reasonable cost and limited circuit complexity. This thesis focuses on the design, electromagnetic simulation and measurement of high-power, high-frequency monolithic integrated amplifiers in gallium nitride technology. Two monolithic amplifiers have been designed, who have been used as a basis for reasoning the correct configuration to be applied in the electromagnetic simulation of their layout. A structured procedure for the construction and simulation of complex integrated circuit layouts with high reliability in the results is also presented. Finally, test fixtures for both fabricated monolithic circuits are presented, which correctly address the thermal management of the high-frequency gallium nitride power amplifiers. Output results show a gain of 18Db with a 3dB ripple from 1 to 39GHz, an adequate input and output impedance match to 50 ohm and an saturated output power level higher than 32dBm from 1 to 37GHz. Consulted bibliography consisted on peer reviewed technical papers, as well as specialiced publications on the field of the microwave monolithic amplifiers.
