Sensors 3d per l'actualització pixel hl-lhc d'atlas i futurs col·lisionadors

• Autores: Daniela Maria Manna Bartasevicius
• Directores de la Tesis: Sebastian Grinstein (dir. tes.), Giulio Pellegrini (codir. tes.)
• Lectura: En la Universitat Autònoma de Barcelona ( España ) en 2021
• Idioma: catalán
• Tribunal Calificador de la Tesis: María del Carmen García García (presid.), David Flores (secret.), Iván Vila Álvarez (voc.)
• Programa de doctorado: Programa de Doctorado en Física por la Universidad Autónoma de Barcelona
• Materias:
  • Ciencia política
    • Opinión publica
      • Información
• Enlaces
  • Tesis en acceso abierto en: TDX
• Resumen

  • This thesis is devoted to the development, fabrication and characterisation of the 3D silicon detectors fabricated at the Centro Nacional de Microelectronica (IMB-CNM) in Barcelona. In the view of the High Luminosity-LHC upgrade of the ATLAS detector and the possible Future Circular Collider, a thorough investigation of the 3D pixel detectors, used as a tracking sensors, is necessary. The detector capabilities have to be evaluated and a new generation of devices that is able to fulfill the stringent requirements of the more powerful colliders must be developed. The 3D pixel detectors, already employed in Insertable B-Layer (IBL) and in ATLAS Forward Proton (AFP) (both installed in ATLAS detector), were fabricated in double sided technology with a pixel cell of 50x250 µm2 and thickness of 230 µm.

    The new 3D sensor generation for the Inner Tracker (ITk) of ATLAS detector upgrade will be fabricated in single sided technology with pixel cells of 50x50 µm2 and 25x100 µm2 and thickness of 150 µm. The decrease of the pixel dimensions are dictated by occupancy reasons and aims to improve the resolution and the level of the radiation tolerance. In going from the _rst (3D detectors fabricated in double sided technology) to the novel generation (3D detectors fabricated in single sided technology), a R&D batch of 230 µm thick wafers with smaller pixel cells was produced; an investigation of the 3D silicon detectors irradiated at fuences such as those expected for the ITk is the subject of chapter 3. Following that, chapters 4 and 5 are devoted to the more important steps for the manufacturing the detectors in single sided technology which is described in chapter 6. The 3D pixel detectors with new design are presented and the electrical characterisation is performed at the wafer level. Finally, the devices belonging to the two generations are irradiated at extreme fuences and first investigation as possible tracking detectors for future more powerful collider facilities is presented.