Resumen de Reconfigurable high efficiency class-f power amplifier using cmos-mems technology
The increasing demand for wireless products to be part of our daily lives brings the need for longer battery lifetime, smaller size and lower cost. To increase battery lifetime, high efficiency power amplifiers (PAs) are needed; To make them smaller, integration or reconfiguration is aimed and to reach lower costs, technologies such as CMOS are final goals. However integration of high efficiency PA in CMOS is challenging due to the technology limitations which restricts the achievable output power and efficiency of the PA. In order to bring solutions for the above-mentioned requirements, in this thesis novel reconfigurable class-F PAs, frequency-reconfiguration, CMOS integration, impedance-reconfiguration and CMOS-MEMS implementation are addressed.
Starting with a single frequency operation, a novel class-F PA for mobile applications is proposed in which with a proper harmonic tuning structure the need for extra filtering sections is eliminated, achieving an excellent harmonic-suppression level. This topology uses transmission lines and is developed to cover multiple frequency bands for purpose of global coverage with aim of size reduction. Three novel frequency reconfigurable PAs are proposed using MEMS and semiconductor switches to accomplish class-F operation at two frequencies. The main novelty of this structure is that the reconfiguration is done not only at fundamental frequency but also at harmonics with reduced number of tuning elements. Moreover, by proper placement of the switches in the stubs, the maximum voltages over the switches are minimized. The proposed structure overcomes the narrow band performance of class-F, giving an efficiency more than 60% over a 225 MHz and 175 MHz bandwidth at 900 MHz and 1800 MHz respectively. Measurement results showed high performance at both frequency bands giving 69.5% and 57.9% PAE at 900 MHz and 1800 MHz respectively.
A novel CMOS class-F PA is proposed that controls up to the 3rd harmonic and can adapt to load variations due to the effect of the human body on mobile phones. It enables the integration of the PA with other devices in a single chip leading to better matching, higher performance, lower cost and smaller size. In addition, it achieves load impedance reconfigurability by using impedance tuner in its output network and by proper tuning of the network, effects of load variation on the performance are compensated. Two designs at 2.4 GHz have been done using either MOS varactors or MEMS variable capacitors as tuning devices. The design using MOS varactors show a maximum measured values of 26% PAE and 19.2 dBm output power for 50 load. For loads other than 50 ohm an improvement of 15% for PAE and 4.4 dB for output power is obtained in comparison to non-tuned one. The second design is done using MEMS variable capacitors integrated in CMOS technology through a mask-less post-processing technique. Simulations results for 50 ohm load show a peak PAE of 32.8% while delivering 18.2 dBm output power.
