Development of tools for the simulation of nanometric transistors using advanced computational architectures

• Autores: Guillermo Indalecio
• Directores de la Tesis: Antonio García Loureiro (dir. tes.), Natalia Seoane Iglesias (codir. tes.)
• Lectura: En la Universidade de Santiago de Compostela ( España ) en 2016
• Idioma: español
• Tribunal Calificador de la Tesis: Francisco Gámiz Pérez (presid.), Paula López Martínez (secret.), Marc Bescond (voc.)
• Materias:
  • Matemáticas
    • Ciencia de los ordenadores
      • Simulación
  • Física
    • Electrónica
  • Ciencias tecnológicas
    • Tecnología electrónica
      • Transistores
• Enlaces
  • Tesis en acceso abierto en: MINERVA
• Resumen

  • The aim of this thesis project is the study of nanoscale semiconductor devices, including new options based on new architectures and designs, for which multidimensional simulation tool based on Monte-Carlo models are going to be developed, including quantum corrections by solving the Schrödinger equation in the transverse direction to the propagation of carriers within the device. So far, our research group has developed several simulators semiconductor devices using various simulation techniques. This work is developed in collaboration with several national and international groups. It should primarily highlight the group maintains collaborations with the universities of Glasgow, Swansea and Granada and gives rise to this thesis project.The ultimate goal is to use the simulator to study various optimized, especially classical electronic devices, SOI-based and multigate, with silicon devices for sizes of under 10 nm.