Radiation hardness studies of microelectronic technologies for the atlas upgrade detector
- Autores: Sergio Díez Cornell
- Directores de la Tesis: Miguel Ullán Comes (dir. tes.), Enrique Fernández (tut. tes.)
- Lectura: En la Universitat Autònoma de Barcelona ( España ) en 2010
- Idioma: inglés
- Tribunal Calificador de la Tesis: Manuel Lozano Fantoba (presid.), Carlos Lacasta Llacer (secret.), A.A. Grillo (voc.)
- Materias:
- Enlaces
- Tesis en acceso abierto en: TESEO
- Resumen
This thesis is devoted to the radiation hardness assurance of several SiGe BiCMOS technologies considered by the ATLAS SiGe group from CERN as candidates to constitute the readout electronics of the strips region of the upgraded silicon tracker and the Liquid Argon calorimeter of the ATLAS Upgrade experiment of the Large Hadron Collider (LHC) at CERN. In addition, it also explores the radiation tolerance of the power devices of a Laterally-Diffused MOS (LDMOS) module implemented in one of the SiGe BiCMOS technologies studied, for its application in the DC-to-DC powering scheme of the strip modules of the silicon tracker of ATLAS. Although the framework of this work is the ATLAS Upgrade experiment, the range of application of the different studies detailed here can be extended to other High Energy Physics (HEP) and space applications.
