Analytical predictive 2d modeling of pinch-off behavior in nanoscale multi-gate mosfets

• Autores: Michaela Weidemann
• Directores de la Tesis: Alexander Kloës (dir. tes.), Benjamín Iñiguez Nicolau (dir. tes.)
• Lectura: En la Universitat Rovira i Virgili ( España ) en 2011
• Idioma: inglés
• Tribunal Calificador de la Tesis: Eugeni Garcia Moreno (presid.), François Lime (secret.), Christophe Lallement (voc.), Juan Bautista Roldán Aranda (voc.), Fabien Pascal (voc.)
• Materias:
  • Ciencias tecnológicas
• Enlaces
  • Tesis en acceso abierto en: TDX
• Resumen

  • In this thesis the pinch-off behavior in nanoscale Multi-Gate MOSFETs was reviewed and with compact models described. For this a 2D approach with Schwarz-Christoffel conformal mapping technique was used. A model to calculate the current in single gate MOSFETs was derived and compared to device simulations from TCAD Sentaurus down to 50nm. For the DoubleGate MOSFET a new way to define the saturation point was found. A fully 2D closed-form model to locate this point was created. It was also found that with quantum mechanics effects a pinch-off point can occur and can be described with the same model. Furthermore the model was extended to describe the coupled pinch-off points in an asymmetrical biased DoubleGate MOSET with an even an odd mode. Also the saturation point behavior in FinFETs was examinated.