Información General

• Autores: David Jamieson (ed. lit.), Andrew Anthony Bettiol (ed. lit.), André Schleife (ed. lit.)
• Editores: Taylor & Francis Group, CRC Press
• Año de publicación: 2024
• País: Estados Unidos
• Idioma: inglés
• ISBN: 9781003307884
• Texto completo no disponible (Saber más ...)

Resumen

• This book explores new experimental techniques and theoretical models to deepen an understanding of radiation effects and ion interaction processes in order to design materials for devices for the emerging quantum technology era.

  Applications include tailored sensors that respond to ionizing radiation and other electromagnetic phenomena; sensors with high radiation hardness; and materials that contain specific engineered defects with desirable optical, magnetic, or electrical properties.

  The chapters detail direct experimental investigations into the dynamics of radiation-induced defects, including their generation, annihilation, and transformation, on a time scale ranging from femto-seconds to seconds which requires a more detailed understanding to develop the potential of ion beams for the new technology era.

  It will be a valuable reference for graduate students and researchers that employ ion beams and want to engage in quantum technologies. The book will also be of interest to scientists and engineers from industry that want to make use of ion beams in quantum technologies or learn more about the potential use of ion beams in the field.

Otros catálogos

• Red de Bibliotecas Universitarias (REBIUN)

Listado de artículos

• • Predictive simulations of electronic and atomic phenomena of particle radiation

    Flyura Djurabekova, Ville Jantunen, Aleksi Leino, Kai Nordlund, André Schleife, Yifan Yao

    págs. 8-57

    

  • Introduction to single ion techniques with focused ion beams

    Milko Jaksic

    págs. 58-84

    

  • Quantum communication and sensing based on colour centres in wide-bandgap semiconductors

    Andrew Bettiol, Sviatoslav Ditalia Tchernij, Takeshi Ohshima, Paolo Olivero

    págs. 85-105

    

  • Applications of ion irradiation for thin-film oxides

    Xuepeng Xiang, Xinwei Wang, Yan Chen

    págs. 106-123

    

  • Dynamics of radiation effects in silicon studied with pulsed ion beams and ion beam induced charge collection

    Francisco Javier García López, María del Carmen Jiménez Ramos, Adrián García Osuna, Mauricio Rodríguez Ramos, Arun Persaud, Qing Ji, Thomas Schenkel

    págs. 138-154