Photochemical deposition of pd-loaded and pt-loaded tin oxide thin films

• G.E. BUONO-CORE ^[1] ; G.A. CABELLO ^[1] ; H. ESPINOZA ^[1] ; A.H. KLAHN ^[1] ; M. TEJOS ^[2] ; R.H. HILL ^[3]
  1. [1] Pontificia Universidad Católica de Valparaíso

     Pontificia Universidad Católica de Valparaíso

     Valparaíso, Chile

     
  2. [2] Universidad de Valparaíso

     Universidad de Valparaíso

     Valparaíso, Chile

     
  3. [3] Simon Fraser University

     Simon Fraser University

     Canadá

     

  Mostrar afiliaciones +
• Localización: Journal of the Chilean Chemical Society (Boletín de la Sociedad Chilena de Química), ISSN-e 0717-6309, ISSN 0366-1644, Vol. 51, Nº. 3, 2006, págs. 950-956
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • Pd and Pt loaded tin OXide thin films have been successfully prepared by direct UV irradiation of amorphous films of ß-diketonate complexes on Si(100) substrates. Tin OXide films loaded with 10, 30 and 50% Pd and Pt, were characterized by Auger electron spectroscopy (AES). The Auger peak intensity ratios of O KL23L23 to Sn M4N45N45 showed that as-deposited films consist of mixed tin OXide phases whereas annealed films consist mainly of single phase SnO2. The results showed that the stoichiometry of the resulting films is in relative agreement with the composition of the precursor films. The surface characterization of these thin films was performed using Atomic Force Microscopy (AFM). This analysis revealed that loaded tin OXide films have a much rougher surface than unloaded films, with rms roughness values ranging from 28-54 nm for as-deposited Pd-SnO X films to 3.6-20 nm for as-deposited Pt-SnO X films. It was also found that Pt-loaded tin OXide films present a better particle size distribution and uniformity when compared to Pd-loaded tin OXide films. These results demonstrate the potential use of these deposited films in the manufacture of gas-sensing devices