Investigation and optical evaluation of precursors for the photodeposition of nanosized zns amorphous thin films

• MARISOL TEJOS R ^[1] ; BÁRBARA G ROLÓN ^[2] ; RODRIGO DEL RÍO ^[3] ; GERARDO CABELLO ^[4]
  1. [1] Universidad de Valparaíso

     Universidad de Valparaíso

     Valparaíso, Chile

     
  2. [2] Universidad de Guanajuato

     Universidad de Guanajuato

     México

     
  3. [3] Universidad Católica de Valparaíso Instituto de Química
  4. [4] Universidad del Bio Bio Facultad de Ciencias Departamento de Ciencias Básicas

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• Localización: Journal of the Chilean Chemical Society (Boletín de la Sociedad Chilena de Química), ISSN-e 0717-6309, ISSN 0366-1644, Vol. 52, Nº. 3, 2007, págs. 1257-1260
• Idioma: inglés
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  • Thin amorphous nanostructured ZnS films have been photochemically obtained by means of direct UV radiation (X= 254 nm) of the complex Zn [ (CH3)2CHCH2OCS2 ]2 deposited on Si(100) and on ITO glass through the spin-coating technique. The UV photolysis of thin films of Zinc Xanthate complex results in the loss of all ligands from the coordination sphere. The binding energy values for as-deposited films in X-Ray Photoelectron Spectra were 1022.7 eV for Zn2p3 and 163-169 eV for S 2p. The as-deposited film showed a non-uniform rough surface with a root-mean-square (rms) roughness of 48.5 nm and a maximum height, Rmax, of 460.5 nm. The annealed ZnS films showed a uniform and a reasonably light but smooth surface with a rms roughness of 43.0 nm and Rmax of 274.2 nm. The optical band gap was determined and found to be 3.2 ± 0.01 eV and 3.25 ± 0.01 eV