Cvd synthesis of graphene from acetylene catalyzed by a reduced cuo thin film deposited on sio2 substrates

• ANDREA CORTÉS ^[1] ; CARLOS CELEDÓN ^[1] ; RAMÓN ZARATE ^[2]
  1. [1] Universidad Técnica Federico Santa María Departamento de Física
  2. [2] Universidad Católica del Norte Facultad de Ciencias Departamento de Física
• Localización: Journal of the Chilean Chemical Society (Boletín de la Sociedad Chilena de Química), ISSN-e 0717-6309, ISSN 0366-1644, Vol. 60, Nº. 2, 2015, págs. 2911-2913
• Idioma: inglés
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• Resumen

  • Few-layer graphene was grown by Chemical Vapor Deposition on a CuO thin film pre-deposited by sputtering on SiO2/Si substrates using acetylene as the carbon source. After evaporation of metal, graphene lies directly in contact with the SiO2 dielectric layer. Raman spectroscopy was used to confirm the presence of a single and/or few-layers of graphene. This procedure does not requiring any post processing to transfer the thin film onto a dielectric substrate or the use of ultra-high vacuum during synthesis.