Resumen de Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
Eric González Rodríguez, Yolanda Peña, Idalia Gómez de la Fuente, Boris Ildusovich, Tomas Hernandez, José Luis Cavazos
Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1 ( Ω-cm)-1.
