Improved electrical characteristics of Al_(x)Ga_(1−x)N/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters (6 pages)

• A. Douara ^[2] ; A. Rabehi ^[3] ; O. Baitiche ^[1] ; M. Hamdani ^[2]
  1. [1] University of Laghouat

     University of Laghouat

     Argelia

     
  2. [2] Tissemsilt University, Algeria
  3. [3] Université Djillali Liabés de Sidi Bel Abbés, Algeria

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 69, Nº. 4, 2023
• Idioma: inglés
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• Resumen

  • This research aims to study the impact of some physical and structural parameters on the I-V characteristics of a high electron mobility transistors (HEMTs) based on Al_(x)Ga_(1−x)N/GaN. We investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al_(0.2)Ga_(0.8)N/GaN heterostructures with 400 nm of buffer layer and a layer doped with n = 4 × 10^(18) cm^(−3), for this structure we find the maximum saturation current of 420 mA/mm. The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.