Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality (12 pages)
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A. Bouazza [1]
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[1] University of Tiaret, Algeria
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- Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 69, Nº. 2, 2023
- Idioma: inglés
- Enlaces
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Resumen
The quality of thin films is the key to any improvement made in the manufacturing of device components. Therefore, the method of obtaining this quality based on the deposition parameters is the focus of our group. The influence of temperature and high pressure on the number of ejected particles, and therefore their deposition and formation of the finest thin films, is investigated in this paper using the sputtering technique in the context of the Monte-Carlo approximation. First, a vacuum chamber with a dimension of 30 × 30 × 50 cm, holding a magnetron with a circular target with a radius of 2 cm, was created. Then, inside this chamber, 10^(5) particles of argon (Ar) were followed by the same amount of xenon (Xe) gas we injected. This target moves 8 cm away from the substrate (with a radius of 7cm), containing three materials (silicon (Si), germanium (Ge), and copper (Cu)) widely used in advanced technologies such as electronics and photovoltaic cell panels. The obtained results demonstrate that increasing the pressure (0.5,2, and 5 Pa) for both gases dropped off spectacularly the total number (with different values) of the material particles reaching the substrate and disrupting the morphology of thin films. Moreover, in contrast to pressure, it has also been proven that mounting gas temperatures of 100, 300, and 600 K, representing three different states in Kelvin degrees, where 100 K ≈ -173◦C for the low (cold), 300 K ≈ 27◦C for the regular (atmospheric), and 600 K ≈ 327◦C for the high (warm) instances, supply a large number of material atoms at the substrate level. In addition, silicon yielded the best results compared to germanium and copper.
