Asymmetry in particle transport in slightly non-homogeneously doped silicon layers in low injection regime and quasi-neutrality condition (8 pages)

• V. Hernández ^[1] ; F. Vázquez ^[1]
  1. [1] Universidad Autónoma del Estado de Morelos

     Universidad Autónoma del Estado de Morelos

     México

     
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 69, Nº. 1, 2023
• Idioma: inglés
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• Resumen

  • In this work a 1D slightly doped n-type Silicon layer is considered. Irreversible thermodynamics transport equations are used to obtain the spatial particle distribution in isothermal stationary state. The excess particle transport is studied in low injection regime and quasi-neutrality condition. The material is subjected to Dirichlet-Neumann (N-D) conditions at the boundaries. We wonder if an asymmetry of the particle flux exists when the boundary conditions are inverted. We find that the asymmetry does exist and a rectification factor may reach the value 0.35. We conclude that particle flux rectification seems to be featuring the particle transport in slightly non-homogeneously doped semiconductor when the excess hole concentration is smaller than the equilibrium hole concentration.