Characterization and physical property studies of Sn, Al doped and co-doped CdO thin films (7 pages)

• W. Azzaoui ^[1] ; M. Medles ^[1] ; K. Salim ^[1] ; A. Nakrela ^[1] ; A. Bouzidi ^[1] ; R. Miloua ^[1] ; M.N. Amroun ^[1] ; M. Khadraoui ^[1]
  1. [1] Université Djillali Liabes, Sidi Bel Abbés, Algeria
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 69, Nº. 1, 2023
• Idioma: inglés
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• Resumen

  • TM (TM = Sn, AI) doped and co-doped CdO thin films were deposited by spray pyrolysis technique on glass substrate at temperature 350◦C. The effect of TM doping and co-doping on the structural, morphological, optical, and electrical properties of CdO thin films was investigated. The obtained films are crystallized in the cubic structure and oriented along the preferential (111) crystallographic plane. The average optical transmittance reaches 79% in the visible range for Sn doped CdO films and 74% for Al-Sn co-doped films. The gap values of the obtained samples are between 2.29 and 2.49 eV. All the deposited films exhibit n-type conductivity with a low electrical resistivity of 7.85 × 10^(−4) Ω.cm obtained for Al doped CdO films.