An empirical model for the Backscattering coefficient of 1-30 keV electrons from thin film targets

• A. Betka ^[1] ; A. Bentabet ^[2] ; A. Bouzid ^[3] ; H. Ferhati ^[3] ; A. Azbouche ^[5]
  1. [1] Université Sétif 1, Algérie
  2. [2] Université Bordj Bou-Arreridj, Algérie
  3. [3] University Mostefa Benboulaid-Batna 2, Batna, Algeria
  4. [4] Université de Bordj-Bou-Arreridj, Algérie
  5. [5] Centre de Recherche Nucléaire d’Alger (CNRA), Algérie

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 68, Nº. 4, 2022, págs. 616-622
• Idioma: inglés
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• Resumen

  • In this paper, the electron backscattering coefficient for normally incident beams with energy up to 30 keV impinging on thin film targets is stochastically modeled using a Monte Carlo simulation. Accordingly, a generalized model describing the realistic backscattering behavior taking into account both the atomic number and the thickness for energy up to 30 keV is proposed. The obtained results are compared to the experimental and theoretical data, where an excellent agreement is achieved. Moreover, the usefulness of the proposed model as a probe for investigating the electrons backscattered behavior of several materials is thoroughly discussed. It is revealed that the developed model allows identifying the critical thickness of thin film exhibiting the same electron backscattering behavior as that of a semi-infinite solid, which contributes to an accurate assessment of surface properties of various thin-films. The use of our empirical model enables reducing the simulation time as compared to that of complicated Monte Carlo time consuming simulation. Therefore, the presented model can be implemented to accurately determinate the electron backscattering coefficient of various thin-film materials with dissimilar thicknesses, making it appropriate for surface analysis applications.