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Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection

    1. [1] Polish Academy of Sciences

      Polish Academy of Sciences

      Warszawa, Polonia

    2. [2] Universidad Politécnica de Chiapas

      Universidad Politécnica de Chiapas

      México

    3. [3] Instituto Politécnico Nacional

      Instituto Politécnico Nacional

      México

    4. [4] Tecnológico Nacional de México/Instituto Tecnológico de Tuxtla Gutiérrez, Optomechatronics Group
    5. [5] Programa de Nanociencias y Nanotecnología, CINVESTAV-IPN
    6. [6] Departamento de Física, CINVESTAV-IPN
  • Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 68, Nº. 2, 2022, págs. 150-167
  • Idioma: inglés
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  • Resumen
    • Crisis in coronavirus times requires understanding the effects on society and establishing efficient mechanisms to prevent infections. The disinfection of personal protection equipment by UVC light remains a key opportunity area. Therefore, this letter presents the main drawbacks and challenges on the fabrication of deep ultraviolet LEDs based on III-nitrides, such as the substrate selection, dislocation reduction, the increase of external quantum efficiency, enhancement of the radiative recombination in the active region, the complications to reach high Al content in AlGaN-based UVC LED avoiding the reduction of the p-doping, replacing the p-GaN contact layer by p-AlGaN without hindering the deposition of ohmic contacts. Furthermore, the cubic phase is suggested as a promising candidate for AlGaN UVC-LEDs applications as is discussed in this work.


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