Thin dielectric films grown by atomic layer deposition: Properties and applications

• F. Campabadal ^[1] ; J. M. Rafi ^[1] ; M. B. González ^[1] ; M. Zabala ^[1] ; O. Beldarrain ^[1] ; M. C. Acero ^[1] ; M. Duch ^[1]
  1. [1] Institut de Microelectrònica de Barcelona
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
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• Resumen

  • Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al 2 O 3 and HfO 2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.