Resumen de Gadolinium scandate by high pressure sputtering as a high-k dielectric
Pedro Carlos Feijoo Guerrero, M.A Pampillón, E. San Andrés
We demonstrate the viability of gadolinium scandate (Gd 2-x Sc x O 3 ) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd 2-x Sc x O 3 /n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO x and GdO x in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.
