Modeling of radiation effects in MOSFETs

• J. Banqueri ^[1] ; M.A. Carvajal ^[1] ; A.J. Palma ^[1]
  1. [1] Universidad de Granada

     Universidad de Granada

     Granada, España

     
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • In this paper, the advances in the modeling of the radiation effects in MOSFETs will be briefly exposed. The change of the threshold voltage, mobility, subthreshold swing and the low frequency noise with the ionizing radiation will be shown and, if possible, modeled. Finally, the use of the MOSFET as dosimeter, mainly for clinical use, will be detailed, where our contribution in the readout techniques will be detailed in order to obtain a low-cost high performance dosimetric verification system.