Towards frequency performance improvement of emerging devices without length scaling

• A. Benali ^[1] ; F. L. Traversa ^[1] ; G. Albareda ^[1] ; x. Oriols ^[1] ; M. Aghoutane ^[2]
  1. [1] Universitat Autònoma de Barcelona

     Universitat Autònoma de Barcelona

     Barcelona, España

     
  2. [2] Universidad Abdelmalek Essaâdi
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • The improvement of the intrinsic high-frequency performance of emerging transistors is commonly based on reducing electron transit time and it is pursued by either reducing the channel length or employing novel high-electron-mobility materials. For gate-all-around transistors with lateral dimensions much shorter than their length, a careful analysis of the total time-dependent current shows that a time shorter than the electron transit time along the channel controls their high-frequency behavior. Both, the standard displacement current definition and the Ramo-Shockley-Pellegrini theorem are used to demonstrate this effect. Therefore, the high-frequency performance of such transistors, with a proper geometry design, can go beyond the intrinsic limits imposed by the electron transit time.