Monte Carlo analysis of thermal effects in self-switching diodes

• Jean-François Millithaler ^[1] ; Ignacio Iñiguez-de-la-Torre ^[1] ; Tomás González ^[1] ; Javier Mateos ^[1] ; P. Sangaré ^[2] ; G. Ducournau ^[2] ; C. Gaquière ^[2]
  1. [1] Universidad de Salamanca

     Universidad de Salamanca

     Salamanca, España

     
  2. [2] Université de Lille
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.