Influence of the contact effects on the variation of the trapped charge in the intrinsic channel of organic thin film transistors

• K.M. Awawdeh ^[1] ; J.A. Jiménez Tejada ^[1] ; P. López Varo ^[1] ; J.A. López Villanueva ^[1] ; M.J. Deen ^[2]
  1. [1] Universidad de Granada

     Universidad de Granada

     Granada, España

     
  2. [2] McMaster University

     McMaster University

     Canadá

     
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.