M.F. Ávila, M. Estrada, A. Cerdeira, L. Reséndiz
Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high I on /I off ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.
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