Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

• Autores: H. García, H. Castán, S. Dueñas, Luis A. Bailón Vega, Pedro Carlos Feijoo Guerrero, M.A. Pampillón, E. San Andrés
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.