Wide Band Gap power semiconductor devices
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José Millán [1] ; Philippe Godignon [1]
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[1] IMB-CNM-CSIC, UAB
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- Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
- Idioma: inglés
- Texto completo no disponible (Saber más ...)
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Resumen
It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions. Which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed.
