Low cost spray-coating boron diffusion on n-type silicon

• Elena Navarrete Astorga ^[1] ; Efraín Ochoa Martínez ^[1] ; José. R. Ramos Barrado ^[1]
  1. [1] Universidad de Málaga

     Universidad de Málaga

     Málaga, España

     
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • A low cost spray-coating technique is implemented to study the boron diffusion in n-type silicon wafers. Temperature and diffusion time have been the main factors on the resulting sheet resistance (R sheet ), reaching the highest values at high temperatures and diffusion times due to the formation of a thick borosilicate glass layer on the wafer surface. This layer has been etched off by HF dipping resulting on more doped emitters. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements have been carried out in order to analyze the correlation of R sheet with the amount of sprayed precursor.