Resumen de Boron diffused emitters passivated with Al2O3 films
Gerard Masmitjà Rusiñol, P. Ortega, G. López, E. Calle, M. Garcia, I. Martin, A. Orpella, C. Voz, R. Alcubilla
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al 2 O 3 (25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance R sh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm 2 depending on R sh . These results are in the-state-of-the-art in boron emitter passivation.
