Resumen de Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
R. Garcia Hemansanz, Eric García Hemme, D. Pastor, A. del Prado, I. Martil, G. Gonzalez Diaz, J. Olea, F. J. Ferrer
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF -power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
