Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques

• O. Martínez ^[2] ; B. Moralejo ^[2] ; V. Hortelano ^[2] ; A. Tejero ^[2] ; M.A. González ^[2] ; J. Jiménez ^[2] ; J. Mass ^[1] ; V. Parra ^[3]
  1. [1] Universidad del Norte

     Universidad del Norte

     Colombia

     
  2. [2] University de Valladolid
  3. [3] DC Wafers Investments

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• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.