A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs

• Yi Huang ^[1] ; Xi Chen ^[1]
  1. [1] China Three Gorges University

     China Three Gorges University

     China

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 41, Nº 5, 2022, págs. 1660-1676
• Idioma: inglés
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• Resumen

  • Purpose – This paper aims to characterize the relationship between the interelectrode capacitance (C) of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the applied bias voltage (V) by a fractional-order equivalent model.

    Design/methodology/approach – A Riemann–Liouville-type fractional-order equivalent model is proposed for the C–V characteristic of MOSFETs, which is based on the mathematical relationship between fractional calculus and the semiconductor physical model for the interelectrode capacitance of metal oxide semiconductor structure. The C–V characteristic data of an N-channel MOSFET are obtained by Silvaco TCAD simulation. A differential evolution-based offline scheme is exploited for the parameter identification of the proposed model.

    Findings – According to the results of theoretical analysis, mathematical derivation, simulation and comparison, this paper illustrates that, along with the variation of bias voltage applied, the interelectrode capacitance (C) of MOSFETs performs a fractional-order characteristic.

    Originality/value – This work uncovers the fractional-order characteristic of MOSFETs’ interelectrode capacitance. By the proposed model, the influence of doping concentration on the gate leakage parasitic capacitance of MOSFETs can be revealed. In the pre-defined doping concentration range, the relative error of the proposed model is less than 5% for the description of C–V characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). Compared to some existing models, the proposed model has advantages in both model accuracy and model complexity, and the variation of model parameters can directly reflect the relationship between the characteristics of MOSFETs and the doping concentration of materials. Accordingly, the proposed model can be used for the microcosmic mechanism analysis of MOSFETs. The results of the analysis produce evidence for the widespread existence of fractional-order characteristics in the physical world.