Modeling and simulation of InAlN/AlN/GaN high electron mobility transistor bypolarization effects

• Autores: J. Charles Pravin, N. Santhosh Sivaraman, B. Rajkumar, V. Gowrishankar
• Localización: Sustainable development in engineering and technology, 2022, ISBN 978-84-124943-4-1, págs. 243-250
• Idioma: inglés
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• Resumen

  • In InAlN/GaN heterostructures with an AlN spacer (InAlN/AlN/GaN hetero-structure),the polarization and sheet carrier density profiles are examined. The effectsof the AlN spacer on the electron concentration and polarization effects at the interfacesof InAlN, GaN, and AlN layers are investigated in this article. At a peak value of6.5 x 1013 c/m2, an effective 2DEG density is reached. The graph was interpolatedusing cubic spline techniques, allowing for more exact data interpretation. Whencompared to traditional AlGaN/GaN HEMTs, the carrier concentration and mobilityin the 2DEG area is much higher. The proposed InAlN/AlN/GaN heterostructure'scarrier concentration reached around 5.23 x 1013 cm-2, which is substantially higherthan the traditional AlGaN/GaN structure. When compared to the present structure,the charge density due to polarization effects and carrier concentration values forthe structure reached a maximum of 6.5 x 1013 cm-2, which is an increase of 45%and 22% correspondingly. These results prove that for high-power applications suchas high-energy RF acceleration and radar, an InAlN-based device could be a viablealternative.