Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

• Wenhao Ding ^[1] ; Xianquan Meng ^[2]
  1. [1] Wuhan University

     Wuhan University

     China

     
  2. [2] Hubei Nuclear Solid Physics Key Laboratory, Hubei, P.R. China
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 66, Nº. 4, 2020, págs. 490-495
• Idioma: inglés
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• Resumen

  • Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.